Advancing Silicon Carbide Electronics Technology II: Core Technologies of Silicon Carbide Device Processing (Materials Research Foundations #69) (Paperback)

Advancing Silicon Carbide Electronics Technology II: Core Technologies of Silicon Carbide Device Processing (Materials Research Foundations #69) By Konstantinos Zekentes (Editor), Konstantin Vasilevskiy (Editor) Cover Image

Advancing Silicon Carbide Electronics Technology II: Core Technologies of Silicon Carbide Device Processing (Materials Research Foundations #69) (Paperback)

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The book presents an in-depth review and analysis of Silicon Carbide device processing. The main topics are: (1) Silicon Carbide Discovery, Properties and Technology, (2) Processing and Application of Dielectrics in Silicon Carbide Devices, (3) Doping by Ion Implantation, (4) Plasma Etching and (5) Fabrication of Silicon Carbide Nanostructures and Related Devices. The book is also suited as supplementary textbook for graduate courses.

Keywords: Silicon Carbide, SiC, Technology, Processing, Semiconductor Devices, Material Properties, Polytypism, Thermal Oxidation, Post Oxidation Annealing, Surface Passivation, Dielectric Deposition, Field Effect Mobility, Ion Implantation, Post Implantation Annealing, Channeling, Surface Roughness, Dry Etching, Plasma Etching, Ion Etching, Sputtering, Chemical Etching, Plasma Chemistry, Micromasking, Microtrenching, Nanocrystal, Nanowire, Nanotube, Nanopillar, Nanoelectromechanical Systems (NEMS).

Product Details ISBN: 9781644900666
ISBN-10: 1644900661
Publisher: Materials Research Forum LLC
Publication Date: March 15th, 2020
Pages: 294
Language: English
Series: Materials Research Foundations